GaN HEMT工艺的X波段发射前端多功能MMIC

X Band Transmitter Front-End MMIC with GaN HEMT Technology

采用0.25μm Ga N HEMT工艺,研制了一款X波段发射前端多功能MMIC,片上集成了一个单刀双掷(SPDT)开关和一个功率放大器电路。其中SPDT开关采用对称的两路双器件并联结构,功率放大器采用三级放大拓扑结构设计,电路采用电抗匹配方式兼顾输出功率和效率。测试结果表明,在8~12 GHz频带内,芯片发射通道饱和输出功率为38.6~40.2 d Bm,功率附加效率为29%~34.5%,其中开关插入损耗约为0.8 d B,隔离度优于-45d B。该芯片面积为4 mm×2.1 mm。

An X-band transmitter front-end monolithic microwave integrated circuit （MMIC） has been developed utili- zing 0.25 -m gallium nitride HEMT technology. The MMIC contains an integrated single-pole double-throw （SPDT） switch and a power amplifier. The SPDT switch is symmetrically composed of two parallel HEMTs at each way. While the power am- plifier is designed using 3-stage topology, reactance matching networks have been employed to improve the output power and efficiency. Across the frequency range of 8 - 12 GHz, the transmitter MMIC delivers an output power of 38.6 - 40.2 dBm with power added efficiency （PAE） of 29% -34.5%. The insertion loss of the switch is about O. 8 dB, and the isolation is more than 45 dB. The chio size is 4 mm×2.1 mm.