摘要
为了研究慢速热退火处理对分子束外延生长(MBE)的GaAs_(0.91)Sb_(0.09)材料晶体质量和发光特性的影响,分别利用XRD及变温光致发光谱对晶体质量及发光特性进行了表征分析。对40K时GaAs_(0.91)Sb_(0.09)合金光致发光谱进行分峰拟合,获得3种样品的局域能深度分别为26、31和35 meV。结果表明:退火处理使合金中As、Sb组分互扩散,合金局域能加深,但退火使GaAs_(0.91)Sb_(0.09)局域态发光比例降低,带边发光的比例提高。
To study the effect of slow thermal annealing treatment on the crystal quality and the luminescence properties of GaAs_(0.91)Sb_(0.09) grown by molecular beam epitaxy(MBE),the XRD and variable temperature photoluminescence(PL)spectra have been used to characterize the crystal quality and luminescence properties.By deconvolution of 40 KPL spectra,and the local energy for three GaAs_(0.91)Sb_(0.09) samples were 26,31,and 35 meV,respectively.The results that the As and Sb components of the alloy were interdiffed after annealing treatment,and the local energy of the alloy was deepened at the same time.However,the proportion of local state light emission of GaAs_(0.91)Sb_(0.09) was decreased and the ratio of the edge emission was increased by annealing.
出处
《中国科技论文》
北大核心
2017年第22期2616-2620,共5页
China Sciencepaper
基金
国家自然科学基金资助项目(61404009
61474010
61574022
61504012
61674021
11404219
11404161
11574130
11674038)
国家重点研发计划项目(2017YFB0405303)
吉林省科技发展计划资助项目(20160519007JH
20160101255JC
20160520117JH
20160204074GX
20160203015GX
20170520117JH)
