不同刻蚀温度下的碳纳米管研究

The Discussion of Carbon Nanotubes at Different Etched Temperature

使用等离子增强化学气相沉积技术,将C2H2、H2和N2当成是反应气体,研制碳纳米管薄膜。使用扫描电镜(SEM)以及拉曼光谱(Raman)对其展开讨论,研究发现:催化剂刻蚀温度对碳纳米管薄膜的生长起着重要作用,获得定向性好、密度适中、杂质缺陷少的碳纳米管的最佳刻蚀温度为700℃。

Carbon nanotubes are obtained with acetylene, hydrogen and nitrogen as gases by a technology of plasma enhanced chemical vapor deposition. They was characterized by scanning electron microscopy （ SEM） andRamanspectra（Raman）.Experimental results show that catalyst at different etched temperature plays important role in the grown of carbon nanotubes and the opti-mum etched temperature of the carbon nanotubes with vertical arrangement, moderate density, litde impurity and defect is 700℃.