摘要
亚微米BiCMOS[B]技术能够实现双极型与CMOS元器件兼容的工艺。为了便于集成,采用双极型制程为基础,引入CMOS元器件工艺,在同一硅衬底上实现兼容的BiCMOS[B]工艺。这是采用亚微米Bi CMOS[B]集成电路芯片结构设计、工艺与制造技术,依该技术得到了芯片制程结构。
Submicron Bi CMOS[B] technology can realize bipolar and CMOS components compatible process. In order to facilitate the integration, the CMOS process is introduced based on the bipolar process, and the compatible Bi CMOS[B] process is implemented on the same silicon substrate. This is a sub micron Bi CMOS[B] integrated circuit chip structure design, process and manufacturing technology, according to the technology to obtain the chip process structure.
作者
潘桂忠
PAN Guizhong(Shanghai Belling Co., Ltd, Shanghai 200233, China;The 771 electronics technique institute of China Aerospace Science and Technology Research Academy, Shaanxi 710600, China)
出处
《集成电路应用》
2017年第12期42-46,共5页
Application of IC
基金
上海市软件和集成电路产业发展专项基金(2009.090027)