摘要
The synthesis,structure and thermal behavior of [Y（dbm）3（H2 O）]（3）（dbm = 1,3-diphenyl-1,3-propandionate） and its use as a spin-coating precursor for Y2 O3 deposition is reported. Complex 3 was prepared by the reaction of [Y（NO3）3·6 H2 O]（1） with 3 equiv of Hdbm（2） in presence of NaOH. The molecular structure of 3 in the solid-state was determined by single X-ray crystal diffraction. Both C1 symmetric crystallographically independent species of 3 possess a YO7 coordination setup with minor deviation from an ideal capped octahedron coordination geometry（∧ enantiomer）. Complex 3 forms a1 D chain, due to intermolecular hydrogen bonds between the coordinated H2 O molecule and the 0 atom of the dbm ligand, respectively. The thermal decomposition behavior of 3 was investigated by thermogravimetric studies in the temperature range of 40-800 ℃ and 40-1300 ℃ under an oxygen and argon atmosphere, respectively. Powder X-ray diffraction（PXRD） measurements of the residues confirmed the formation of Y2 O3. Complex 3 was applied as a spin-coating precursor for yttrium oxide film formation on either Si wafers with a continuous 100 nm thick SiO2 film, or with a native oxide layer.The as-deposited Y2 O3 layers are smooth, conformal, dense and transparent and are of a thickness of 27 and 30 nm, respectively.
The synthesis,structure and thermal behavior of [Y（dbm）3（H2 O）]（3）（dbm = 1,3-diphenyl-1,3-propandionate） and its use as a spin-coating precursor for Y2 O3 deposition is reported. Complex 3 was prepared by the reaction of [Y（NO3）3·6 H2 O]（1） with 3 equiv of Hdbm（2） in presence of NaOH. The molecular structure of 3 in the solid-state was determined by single X-ray crystal diffraction. Both C1 symmetric crystallographically independent species of 3 possess a YO7 coordination setup with minor deviation from an ideal capped octahedron coordination geometry（∧ enantiomer）. Complex 3 forms a1 D chain, due to intermolecular hydrogen bonds between the coordinated H2 O molecule and the 0 atom of the dbm ligand, respectively. The thermal decomposition behavior of 3 was investigated by thermogravimetric studies in the temperature range of 40-800 ℃ and 40-1300 ℃ under an oxygen and argon atmosphere, respectively. Powder X-ray diffraction（PXRD） measurements of the residues confirmed the formation of Y2 O3. Complex 3 was applied as a spin-coating precursor for yttrium oxide film formation on either Si wafers with a continuous 100 nm thick SiO2 film, or with a native oxide layer.The as-deposited Y2 O3 layers are smooth, conformal, dense and transparent and are of a thickness of 27 and 30 nm, respectively.
基金
Project supported by the German Research Foundation(Cluster of Excellence Center for Advancing Electronics Dresden(cfaed)
partially performed within the Federal Cluster of Excellence EXC 1075 MERGE Technologies for Multifunctional Lightweight Structures
