摘要
在传统的电流模电压基准结构下,基于一阶补偿后的电压基准输出特性,设计了一个简单的高、低温补偿电路,在宽的温度范围内(-50~150℃),显著提高了电压基准的精度。同时,对电路进行简单的改进,输出电压获得了高的电源抑制比。对设计的电路采用TSMC 65 nm CMOS工艺模型进行仿真,在1.5 V的电源电压下,PSRR为-83.6 d B,温度系数为2.27 ppm/℃。
Based on bandgap voltage reference structure in the traditional current mode and the first-order compensation of the volt-age reference output characteristics, introducing a subsection compensation circuit, which significantly improve the accuracy of voltage reference in a wide temperature range（-50 ~ 150 ℃）. At the same time, the circuit is simply improved, the output voltage to obtain a high power supply rejection ratio. Using TSMC 65 nm CMOS process simulation model, in the power supply voltage of 1. 5 V,power supply rejection ratio is-83. 6 d B, temperature coefficient is 2. 27 ppm/℃.
出处
《电子技术应用》
2018年第1期17-19,23,共4页
Application of Electronic Technique
基金
模拟集成电路重点实验室资助项目(6142802010101)
关键词
电压基准源
低温漂
高电源抑制比
bandgap voltage reference
low temperature drift
high power supply rejection ratio
