硫化退火温度对金属三靶顺序溅射CZTS薄膜性能的影响

Effect of Annealing Temperature on Performance of CZTS Thin Films Prepared via Metal Targets Sequential Sputtering Followed by Sulfuration Technology

通过XRD及Raman物相分析、SEM形貌观察和EDS成分分析等方法研究了硫化退火温度对金属三靶顺序溅射铜锌锡硫(CZTS)薄膜性能的影响。结果表明,在一定温度范围内(500~580℃),随着温度的升高薄膜的结晶性能有变好的趋势,形貌也得到了改善。当温度达到600℃时,CZTS薄膜会发生分解反应,该分解反应不但导致薄膜结晶性能及形貌恶化,也造成了锡元素的损失。580℃条件下获得的薄膜各项性能俱佳,是最适合本实验体系的退火温度。

The effects of temperature of sulfide annealing on properties of CZTS thin films based on sequential sputtering from three metal targets were systematically studied by XRD,Raman,SEM,and EDS.The results show that crystallization and morphology of film are enhanced with increase of annealing temperature from 500 ℃ to 580 ℃,but decomposition reaction of CZTS film occurs at 600 ℃,which not only deteriorates crystallization and morphology of film,but also cause losing of Sn element.The optimum sulfide annealing temperature is 580 ℃.