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磁过滤真空阴极电弧技术弧电流对四面体非晶碳薄膜性能的影响 被引量:2

Influenceof Arc Current on Growth and Properties of Tetrahedrally Bonded Amorphous Carbon Coatings
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摘要 研究了磁过滤阴极真空电弧技术中不同弧电流(20~100 A),制备的四面体非晶碳薄膜性能的影响。通过对薄膜厚度、薄膜硬度、表面形貌以及sp3键含量随弧电流的变化结果进行了测试。结果表明,当弧电流从20增大至100 A,表征薄膜sp杂化碳含量的ID/IG从0.212增加到1.18,显示制备薄膜的sp3键含量逐渐减少,同时sp2键在逐渐增加。随着弧电流值上升,薄膜硬度增加,表明其值与弧电流值呈正相关性,高的弧电流使通过磁过滤器的大颗粒等离子体数增加,从而薄膜表面形貌易于沉积大颗粒,导致薄膜表面质量下降。因此,选择合适的弧电流值可优化Ta-C薄膜制备工艺,本文研究内容为工业应用中通过弧电流调整优化膜层综合性能提供参考。 The tetrahedrally-bonded amorphous carbon(Ta-C) coatings were synthesized by magnetic filtered catholic arc deposition on substrate of stainless steel. The impact of the arc current on the hybrid bond formation and tribological propertiesof the Ta-C coatings was investigated with Raman spectroscopy and conventional mechanical probes. The results show that the arc current significantly affected the content of sp3-bonded C-atoms and tribological properties. For example,as the current increased from 20 to 100 A,the ID/IGratio decreased from 0. 212 to 1. 18,indicating an increase of sp2-bonded C-atoms and a decrease of sp3-bonded C-atoms; The hardness and surface roughness increased because an increase of large C-clusters were deposited. A large current heated up the coating,resulting in formation of graphite-like grains; whereas a smaller current increased the purity of C-ions,producing better quality Ta-C coating with higher content of sp3-bonded C-atoms.
作者 于振华 姜康
出处 《真空科学与技术学报》 CSCD 北大核心 2017年第12期1206-1211,共6页 Chinese Journal of Vacuum Science and Technology
关键词 弧电流 Ta-C薄膜 磁过滤真空阴极电弧技术 表面质量 Arc current, Ta-C film, FCVAD, Surface quality
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