离子镀中弯管磁过滤器的效率和颗粒去除效果的研究

Influence of Deposition Conditions on Growth of Tetrahedral Amorphous Carbon Coatings

真空多弧离子镀沉积四面体非晶碳薄膜(ta-C)过程中,利用90°磁过滤器弯管去除大颗粒。本文探究了磁场强度、弯管偏压、弧电流和挡板孔径对弯管中离子传输效率(离子流)的影响,同时研究了薄膜表面颗粒去除情况。实验结果表明,弯管中离子流随磁场强度增强而增大,但增大磁场强度会导致颗粒数量增多;在中低磁场强度下,弯管偏压约为+15 V时可获得较高的离子传输效率,相比于不施加偏压提高了近70%;减小挡板孔径可使沉积速率降低,但可以显著改善大颗粒过滤效果;改变弧电流对弧源离子产生率和过滤器传输效率几乎没有影响,减小弧电流能够降低大颗粒的发射数量。本文研究内容为工业应用中采用磁过滤弯管减少薄膜大颗粒提供参考。

The tetrahedral amorphous carbon（ta-C） coatings were synthesized by multi arc ion plating in the reactor with a 90 o-duct magnetic filter. The influence of the growth conditions,including the magnetic field,duct bias,baffle-aperture and arc-current,on the ion transport and macro-particle removal was investigated. The results show that the synthesis conditions all had a major impact. To be specific,as themagnetic field increased,the ion current and macro-particle density increased; in a mild magnetic field,an optimizedbias of ＋ 15 V enhanced the ion transmission efficiency by ~ 70%; and as the baffle-aperture decreased,the macro-particle density significantly decreased,accompanied by a deposition-rate reduction. Though little affecting the ion transmission efficiency,a decrease of the arc-current markedly reduced the macro-particle emission. We suggest that the results be of some technological interest in industrial production of ta-C coatings.