0.1～2.0 GHz 10W GaN单片行波放大器

0.1～2.0 GHz 10 W GaN Travelling Wave Power Amplifier for MMIC Implementation

报道了一款采用0.25μm GaN功率MMIC工艺研制的0.1~2.0 GHz超宽带功率放大器芯片。芯片采用非均匀分布式拓扑结构进行设计。在管芯栅极端设计稳定结构来提高电路的整体稳定性,在漏极端采用阻抗渐变的方式进行电路匹配,从而提高电路的效率。芯片漏压30 V、连续波条件下,在0.1~2.0 GHz频率范围内,线性增益大于18 d B,功率增益大于13 d B;在0.1~1.5 GHz频率范围内饱和输出功率大于10 W,功率附加效率大于55%,最高效率达到78%。芯片面积2.4 mm×1.9 mm。

A 0.1～2.0 GHz ultra-broadband power amplifier was presented,which was fabri- cated by 0.25 μm GaN pHEMT technology. The design method using non-uniform distributed topological structure was adopted. We used the stabilizing network at gate input to improve the systemrs overall stabilization, and used the tapered impedance matching network to optimize the power added efficiency （PAE）. Measurement results of the MMIC operating at 30 V power sup- ply demonstrate a small signal gain greater than 18dB and a power gain greater than 13 dB in the frequency range of 0.1～2.0 GHz. The MMIC PA at continuous wave （CW） operating condition delivers an output power more than 10W and a PAE greater than 55%, having a maximum of 78% in the frequency range of 0.1～1.5 GHz. The chip size is 2.4 mm×1.9 mm.