集成电路Cu互连中Nb_xSi_(1-x)扩散阻挡层的制备与热稳定性研究

A study of preparation and thermal stability of Nb_xSi_(1-x) diffusion barrier layer in Cu interconnect of integrated circuit

随着集成电路深亚微米工艺的不断发展,Cu因其低电阻率以及良好的抗电迁移能力成为了新一代的互连材料。然而,Cu和Si元素扩散造成的污染是无法避免的。为了阻止Cu的扩散同时提高Cu与Si之间的粘附性,在Cu互连线外添加一层扩散阻挡层的技术十分必要。寻找能够有效克制Cu扩散的阻挡层材料已经成为近年来Cu互连技术研究中的重点研究之一。本文采用射频磁控溅射技术和直流磁控溅射技术在单晶Si(100)衬底上制备了Nb_xSi_(1-x)/Si系统和Cu/Nb_xSi_(1-x)/Si系统并对不同退火温度热处理后的Cu/Nb_xSi_(1-x)/Si系统的电阻率和热稳定性进行了探究。

With the development of deep sub-micron technology in the manufacture of integrated circuit, Cu has been used as a new kind of interconnection materials for its lower resistivity and better electro-migration resistance. However, the diffusion contamination between Cu and Si is inevitable. A diffusion barrier under the Cu interconnect-lines was needed to prevent the diffusion of Cu and improve the adhesion between Cu and Si. Searching appropriate diffusion barrier has been a hot research topic of Cu interconnection technology for years. RF magnetron sputtering technology and DC magnetron sputtering technology were used to manufacture the Nb_xSi_(1-x)/Si structures and the Cu/Nb_xSi_(1-x)/Si structures on the surface of monocrystalline silicon(100). The article researched the electrical resistivity and the thermal stability of Cu/Nb_xSi_(1-x)/Si structures annealed at different temperatures.