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GaN HFET中局域电子气产生的动态电流(续)

Dynamic Current Induced by Localized Electron Gasses in GaN HFET
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摘要 3瞬态电流谱和瞬态电阻谱中两种电子气的动态电流峰为了深入研究器件射频工作中的电流崩塌,许多作者测量了栅漏偏置电压改变时沟道的动态输运行为,获得了大量瞬态电流谱和瞬态电阻谱。大家认为这些电流谱和电阻谱都是陷阱俘获电子耗尽沟道二维电子气造成的。因此文献中都先加一个脉冲来给器件中的陷阱充电,
作者 薛舫时
出处 《固体电子学研究与进展》 CSCD 北大核心 2017年第4期221-228,244,共9页 Research & Progress of SSE
基金 国家自然科学基金资助项目(61474101 61504125) 国家高技术研究发展计划(863计划)资助项目(2015AA016802 2015AA033305)
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