摘要
采用SiGe BiCMOS工艺设计了一款大功率高效率硅基功率放大器芯片,用于驱动现有大功率GaN功率放大器芯片,满足相控阵雷达的低成本需求。该硅基功率放大器通过和低噪声放大器、驱动放大器、数控移相器、数控衰减器、单刀双掷开关、电源管理以及数字逻辑单元等硅基电路进一步集成,实现了一片式高集成度硅基幅相多功能芯片,从而降低了前端收发组件的尺寸和成本。在硅基功率放大器设计中,结合Stack结构、变压器耦合结构和有源偏置结构,开展电路设计及优化,提高了放大器的输出功率和效率。测试结果表明:研制的硅基功率放大器在Ku波段f_1~f_2(3GHz带宽)频带内,实现了小信号增益31dB;在-3dBm输入功率条件下,实现发射功率21.5dBm、功率附加效率(PAE)25%等技术指标。集成功率放大器的幅相多功能芯片在f_1~f_2(3GHz带宽)频带内,实现了发射通道增益24dB;在5dBm输入功率条件下发射功率21.5dBm、功率附加效率(PAE)23%等技术指标。
A SiGe power amplifier based on BiCMOS technology was presented, which was used for the drive of high-power GaN power amplifier in phase array radar system. By combining the amplifier and a low-noise amplifier, a drive amplifier, a digital phase shifter, a digital attenu- ator, a single pole double throw switch, power management and digital logic cell, a fully inte- grated silicon based phase and amplitude control multi-function chip was designed for decreasing the size and cost of the front-end transceiver modules. By using the Stack amplifying core, trans- former coupling and active bias, the output power and power added efficiency （PAE） of the pow- er amplifier is improved. The measured results of the power amplifier shows a 31dB small signal gain within 3 GHz bandwidth and a 21.5 dBm output power and a 25% PAE with a --3 dBm in- put power. The integrated multi-function chip exhibits a 24 dB gain within 3GHz bandwidth and a 21.5 dBm output power and a 23% PAE with a 5 dBm input power.
出处
《固体电子学研究与进展》
CSCD
北大核心
2017年第4期245-250,256,共7页
Research & Progress of SSE
