FinFET静电可靠性及新型Fix-base SOI FinFET研究

Investigation on the Electrostatic Reliability of FinFET and Novel Fix-base SOI FinFET

在鳍型场效应晶体管(SOI FinFET)相关静电防护技术研究基础上,提出了一种新型的体区接触固定型绝缘体上硅鳍型场效应晶体管泄放钳位装置(Fix-base SOI FinFET Clamp)。该新型结构的器件解决了基区接触浮空在静电防护设计时引起的一系列问题,而且对正常的FinFET工艺具有良好的兼容性。通过计算机辅助工艺设计(TCAD)仿真论证了Fix-base SOI FinFET Clamp具有明显效果,详细阐述和讨论了SOI FinFET和Fix-base SOI FinFET Clamp工作状态下的电流和热分布。

A novel fix-base SOI FinFET（Fin field effect transistor） clamp was proposed for the electrostatic protection of SOI FinFET. The novel structure of the device was to solve the problems induced by the floating base, which also has good compatibility with the standard Fin- FET processes. Using TCAD （technology computer aided design） simulation, it was shown that the fix-base SOI FinFET clamp has evident effects. The current and heat distribution of the SOI FinFET and fix-base SOI FinFET Clamp were also described and discussed in details.