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InP DHBT器件与电路的研究进展 被引量:2

Research Progress of InP DHBT Devices and Circuits
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摘要 介绍了磷化铟(InP)基异质结双极晶体管制作技术的发展动向,对近几年InP双异质结双极晶体管(DHBT)的制作技术与电路的研究成果进行了归纳总结。介绍了InP DHBT在微波、超高速集成电路、微系统异质集成等领域的应用,以及InP DHBT应用于功率放大器、倍频器、太赫兹单片电路、数模转换器等取得的进展,显示出InP DHBT在高频、高速和微系统集成三个方面的巨大应用价值。 The developments of InP-based heterojunction bipolar transistor technologies were presented.Research results of device manufacturing techniques and circuit technologies of InP double heterojunction bipolar transistor(DHBT)in recent years were summarized.The application progress of InP DHBT devices in the microwave circuits,ultra high speed ICs,micro-system heterogeneous integration,etc,was introduced.Some reports about the power amplifiers,frequency multipliers,terahertz monolithic ICs and data converters which were developed with the InP DHBT technology were given.The ultra-high frequency and terahertz circuits which were fabricated in heterogeneous integration technology were presented in detail.
出处 《微电子学》 CSCD 北大核心 2017年第6期881-884,共4页 Microelectronics
关键词 磷化铟 DHBT 超高速集成电路 太赫兹 微系统 异质集成 InP DHBT Ultra high speed IC Terahertz Micro-system Heterogeneous integration
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