摘要
本文用MCNP程序模拟计算了有无韧致辐射时屏蔽材料的积累因子,研究在不同条件下γ射线产生的次级电子的韧致辐射对积累因子的影响。模拟结果表明:低能(<2 MeV)γ射线下韧致辐射对积累因子影响很小,高能(>6 MeV)γ射线下韧致辐射对积累因子影响很大;γ射线能量越大、屏蔽厚度越大或屏蔽材料原子序数Z越大,韧致辐射对积累因子影响越大。并且在涉及或不涉及韧致辐射情况下,用MCNP模拟计算的积累因子与理论计算值基本一致。
The buildup factors of different γ - rays energy, shielding thickness or shielding materials, including bremsstrahlung radiations, for a point isotropic source have been calculated using MCNP code. The simulation results show that when the energy of γ - ray is less than 2 MeV, contribution of the bremsstrahlung to buildup factor is very small; when the energy of γ - ray is more than 6 MeV, contribution of the bremsstrahlung to buildup factor is very large. With the increasing of γ - ray energy, shielding thickness or shielding materials atomic number Z, the contribution of the bremsstrahlung to buildup factor is getting lager. The buildup factors with or without bremsstrahlung calculated by MCNP shows good agreement with the calculation value.
出处
《核电子学与探测技术》
北大核心
2017年第5期478-481,共4页
Nuclear Electronics & Detection Technology
基金
中国科学院战略性先导科技专项(XDA14020102)
自然科学基金面上项目(41574110)资助
