固态微波电子学的新进展

New Progress of Solid-State Microwave Electronics

固态微波电子学是现代电子学的重要分支之一,其基础材料已由第一代半导体Si和Ge、第二代半导体GaAs和InP,发展到第三代半导体GaN和SiC,石墨烯和金刚石等C基新材料正在进行探索性的研究,其加工工艺的尺寸也已进入纳米尺度,其工作频率已达到1 THz,应用的频率可覆盖微波毫米波到太赫兹。目前固态微波电子学呈多代半导体材料和器件共同发展的格局。综述了具有代表性的11类固态器件（RF CMOS,SiGe BiCMOS,RF LDMOS,RF MEMS,GaAs PHEMT,GaAs MHEMT,InP HEMT,InP HBT,GaN/SiC HEMT,GFET和金刚石FET）近几年的最新研究进展,详细介绍了有关固态微波电子学的应用需求、技术特点、设计拓扑、关键技术突破和测试结果,分析了当前固态微波电子学总的发展趋势和11类固态微波器件的发展特点和定位。最后介绍了采用3D异构集成技术的射频微系统的最新进展,指出射频微系统是发展下一代射频系统的关键技术。

Solid-state microwave electronics is one of the important branches of modern electronics,and the basic material has been developed from the first generation of semiconductor Si and Ge,the second generation of semiconductor GaAs and InP,to the third generation of semiconductor GaN and SiC.The new C-based materials such as graphene and diamond are undergoing exploratory research. The size of their processing technology has also entered the nanometer scale,the operating frequency has reached 1 THz,and the application frequency can cover the microwave millimeter wave to terahertz. At present,multigeneration semiconductor materials and devices are in common development pattern of the solid-state microwave electronics. The latest research development of the representative 11 types of solid-state devices（ RF CMOS,SiGe BiCMOS,RF LDMOS,RF MEMS,GaAs PHEMT,GaAs MHEMT,InP HEMT,InP HBT,GaN/SiC HEMT,GFET and diamond FET） in recent years is reviewed. The application requirements,technical features,design topologies,key technical breakthroughs and test results of the concerned solid-state microwave electronics are introduced in detail. The current development trend of solid-state microwave electronics and the development characteristics and positioning of the 11 types of solid-state microwave devices are analyzed. Finally,the latest development of the RF microsystem with 3D heterogeneous integration technology is introduced,indicating that the RF microsystem is the keytechnology for developing the next-generation RF system.