飞秒激光过饱和掺杂硅材料的研究及发展

Research and development of femtosecond-laser hyperdoped silicon

飞秒激光利用其超快的作用时间、超强的峰值功率的特性,可以与半导体材料表面发生瞬态光化学反应,从而对材料进行有效的掺杂,且可以实现超过材料固溶度极限的过饱和掺杂,同时能在材料表面形成准周期的微纳结构。导致半导体表面性质发生改变,产生超宽光谱高吸收的特性,从而突破传统物理限制,并由此产生了一系列全新的应用。本文总结了飞秒激光与硅相互作用的基本理论和几种物理模型,介绍了其在相关领域的应用,并对飞秒激光过饱和掺杂及改性硅的发展前景作出展望。

Femtosecond laser pulses induce intriguing transient photochemical reactions with semiconductors at the sample surface, due to its ultrashort duration and ultrahigh peak power. Taking advantage of these characteristics, material can be effectively doped. The doping level is likely far beyond the solid solubility limit（so called supersaturated doping）, meanwhile quasi-periodic structures with micro/nano-scales are created at the material surface as well. As a result, surface properties are strikingly changed, e.g. ultra-high absorption over a broad range from near ultraviolet to infrared emerges, which breaks the limit of traditional physics and brings novel applications. In this review, we summarize the basic theories and several physical models of femtosecond laser-silicon interaction, introduce its applications in relevant areas, and depict future prospects of femtosecond laser hyperdoped and processed silicon.