摘要
通过自主搭建的光伏电池表面缺陷检测系统,采集砷化镓基光伏电池电致发光图像和暗场IV特性曲线数据。归纳了4种典型光伏电池表面缺陷类型,并根据采集的图像和数据分析表面缺陷和寄生串并联电阻的关系,研究了不同类型的缺陷对电池的寄生电阻大小和分布的影响规律。为聚光光伏系统太阳能电池的评价和组件生产提供一种可靠的依据和参考。
The electroluminescent images and dark IV curves of GaInP/GaInAs/Ge Solar Cells were collected by a self-built photovoltaic cell surface defect detection system. The influence of different types of defects on the size and distribution of the parasitic resistance of the battery was studied according to the relationship between the surface defects and the parasitic series and parallel resistance of the collected images and data. A reliable basis was provided a reference for the evaluation and component production of solar photovoltaic cells in concentrating photovoltaic systems.
出处
《武汉理工大学学报》
CAS
北大核心
2017年第3期1-9,共9页
Journal of Wuhan University of Technology
基金
国家自然科学基金(51402224
51272198)
国家国际科技合作专项项目(2014DFA63070)
青海省重点研发与转化计划项目(2016-GX-118)
关键词
砷化镓电池
电致发光
表面缺陷
串并联电阻参数
GaInP/GaInAs/Ge solar cells
electroluminescence
surface defects
series and parallel resistance parameters