一种抗单粒子瞬态扰动触发器加固结构

An Radiation Hardened Flip-flop for Anti-single Event Transient Effect

提出了一种新型的电阻-电容抗辐射触发器加固结构(RC-DICE),并与DICE结构加固触发器、RDFDICE结构加固触发器进行了比较。测试电路利用0.18μm体硅CMOS工艺进行流片,单粒子验证试验在中国原子能科学研究院抗辐射应用技术创新中心进行。结果证明:新型抗辐射加固触发器在50 MHz工作频率下,单粒子翻转线性能量转移阈值≥37 MeV·cm^2/mg,能够满足航天应用的需求。

A new radiation hardened flip-flop with resistance-capacitance for filtering was presented and compared with other kinds of radiation hardened flip-flops,i.e.,DICE and RDFDICE in terms of anti-radiation characteristic.The test chip was realized in a 0.18μm CMOS technology,and the radiation experiment was executed in Innovative Center of Radiation Hardening Applied Technology,China Institute of Atomic Energy.The radiation experiment result shows that the liner energy transfer of the new radiation hardened flip-flop≥37 MeV·cm^2/mg,which meets the needs of aerospace application.