摘要
In this study, the effect of heat treatment on the room temperature strength of W-core Si C fiber produced by chemical vapor deposition（CVD） was investigated. Thermal exposure in the temperature range of 900–1000？C decreases the strength of the Si C fiber. Fracture morphology analysis indicates that failure initiations predominantly take place at the W-core/Si C interface. A reaction layer that formed at the W-core/Si C interface during thermal exposure degraded the fiber strength and an empirical linear relationship of strength vs thickness of the reaction layer can be obtained. The kinetics of the growth of the W-core/Si C reaction layer were determined.
In this study, the effect of heat treatment on the room temperature strength of W-core Si C fiber produced by chemical vapor deposition（CVD） was investigated. Thermal exposure in the temperature range of 900–1000？C decreases the strength of the Si C fiber. Fracture morphology analysis indicates that failure initiations predominantly take place at the W-core/Si C interface. A reaction layer that formed at the W-core/Si C interface during thermal exposure degraded the fiber strength and an empirical linear relationship of strength vs thickness of the reaction layer can be obtained. The kinetics of the growth of the W-core/Si C reaction layer were determined.
基金
the Raman Spectroscopy Laboratory of Institute of Metal Research, Chinese Academy of Sciences for the support in the accomplishment of this paper
