摘要
文中提出了一种采用增益提高技术的超宽带低噪声放大器(LNA)。为了通过提高电路的输出阻抗,进而实现改善电路增益的目的,该LNA包含了两级共射共基放大器电路,并在共基晶体管基极引入电感。基于0.13μm SiGe BiCMOS工艺对其进行设计,实现了超宽的31GHz^42GHz的工作频率,增益为20.1dB^30.7dB,噪声系数为1.19dB^1.31dB,并且在1.8V单电源电压供电情况下,消耗的功耗为13.2mW。
This paper presents an ultra-wideband low-noise amplifier（LNA） with gain boosting technology. The circuit consists of two stages of cascode amplifiers with inductive common-base termination,which improves the gain by increasing the output impedance. It implemented the design in 0. 13μm SiGe BiCMOS technology,the proposed LNA has an ultra-wideband operating frequency of 31 GHz to 42 GHz. The proposed high-gain LNA has a gain of 20. 1 dB to 30. 7 dB,and a noise figure within 1. 19 dB to 1. 31 dB,as determined from simulations,while drawing 13. 2 mW from a 1. 8 V supply.
出处
《信息技术》
2018年第1期141-143,154,共4页
Information Technology
关键词
噪声放大器
增益提高技术
超宽带
low-noise amplifier
gain boosting technology
ultra-wideband
