两种考虑温度影响的SiC JFET仿真模型

Two SiC JFET Simulation Model Considering Temperature Influence

针对目前物理建模方法参数获取困难、行为建模方法需要大量实验数据的问题,该文提出两种简单易用的考虑温度影响的Si C JFET功率器件Saber环境建模方法。模型I基于Saber软件提供的JFET模板实现,问题的难点转化为如何准确提取建模对象Si C JFET的相关模板参数;模型II根据器件厂商提供的Si C JFET的PSpice模型,在Saber环境中搭建相应的电路实现,问题的难点转化为如何分析透彻器件厂商提供的模型中各参数的物理意义,并如何调整这些参数使其能准确模拟建模对象的静态和动态特性。该文详细阐述两种仿真模型的特点及具体实现方法,并从静态特性和动态特性两个方面,从仿真和实验两个角度,验证两种仿真模型的正确性和有效性,比较两种建模方法的适用性。

To tackle the problem of low availability of physical parameters in physical modeling and hard to obtain of large scale experiment data in behavioral modeling, two practical and convenient models of silicon carbide （SIC） JFET considering temperature are proposed in this paper. Model I, based on JFET template where the difficulty lies in extract template parameters of the modeled SiC JFET precisely; Model II, a sub-circuit model built in Saber, based on the PSpice JFET model provided by the vendor. Since the PSpice model provided cannot be converted directly to Saber model, so there is a need to realize and adjust the PSpice model parameters to simulate the device accurately under static and dynamic characteristics. At the end, efficiency and effectiveness of both models are verified through digital simulation and experimental tests along with static and switching characteristics.