蓝宝石衬底材料的研究及应用进展

Research and Application Progress of Sapphire Substrates

蓝宝石因为其生产技术成熟、稳定性好、性价比高而被广泛应用于光电领域,成为GaN基光电器件的主要衬底材料。传统的蓝宝石衬底生长GaN薄膜存在许多问题,如由晶格常数不同产生的晶格失配、热应力失配等,且GaN薄膜结晶质量较差、光线提取效率低。介绍了图形化蓝宝石衬底技术在制作Ga N基LED器件中的应用,比较了几种图形化衬底对LED的发光性能的影响。在图形化蓝宝石衬底上采用PVD法生长AlN薄膜,可以降低GaN薄膜的螺旋位错和刃位错、提高MOCVD生长效率、显著提高设备利用率。另外,介绍了蓝宝石衬底在SOS领域的应用,列出了SOS工艺对蓝宝石衬底的具体要求。蓝宝石作为一种重要的衬底材料,未来的发展前景会更加广阔。

As the main substrate material of GaN-based optoelectronic devices, sapphire is widely used in the field of optoelectronics because of its mature production technology, the excellent stability and high ratio of performance to cost. The GaN film growth by traditional sapphire substrate presents many problems, such as lattice mismatch and thermal stress mismatch caused by lattice constant difference, which makes the poor crystallization quality of GaN films and low efficiency of light extraction. It covers the application of patterned sapphire substrate in the fabrication of GaN-based LED devices, comparing the influence of several graphical substrates on the luminescence performance of LED. The A1N film grown by PVD on sapphire substrate can reduce the helical dislocation and edge dislocation of GaN films, increase the growth efficiency of MOCVD, and significantly improve the utilization of equipment. In addition, the application of sapphire substrate in the field of SOS has been introduced, and the specific requirements of sapphire substrate for SOS process have been listed as well. Sapphire as an important substrate material will have a bright future in its application.