低功耗氧化铪基柔性透明阻变存储器制备及其性能研究

Study on fully transparent HfO_x-based RRAM with lower switching power on flexible substrates

利用微电子加工工艺在柔性PET衬底上制备透明氧化铪基阻变存储器.采用氧化铪/氧化锌双介质层将存储器转变电流降低至μA量级,从而实现柔性透明存储器的低功耗(μW量级).研究表明,双介质层阻变存储器不仅具有稳定、可重复的阻变存储特性,还具有一定抗弯折性能和较高的热稳定性.进一步研究表明,由于氧化铪/氧化锌界面势垒的存在,抑制了介质中电荷的输运,从而达到器件低电流工作的效果.

Transparent HfOx-based RRAMs were deposited onto flexible PET substrates with micro- fabrication. HfOx/ZnO double layer was used as storage medium to reduce switching current to μA, and the switching power is reduced to μW as well. The double-layer RRAM exhibits stable and revers- ible resistive switching features. It also presents anti-bending properties and desirable thermal stability. Further studies show a schottky harrier at the HfOx/ZnO interface would suppress charge transport in the storage medium thus to reduce switching current.