Sb掺杂Si_3N_4基Si量子点薄膜的制备与结构

Preparation and Structural Properties of Sb-doped Si_3N_4-based Si Quantum Dot Thin Films

基于多靶射频磁控溅射技术,结合快速光热退火后处理制备了Sb掺杂Si_3N_4基Si量子点(SiQDs)薄膜。采用透射电镜、掠入射X射线衍射、拉曼光谱和光致发光光谱等手段对薄膜的微结构和发光特性进行了研究,分析了Sb掺杂对Si-QDs薄膜的微结构和发光特性的影响规律.结果表明,Sb掺杂表现出明显的诱导晶化作用.掺杂的Sb有助于Si原子在Si_3N_4基质中的扩散并形成Si-QDs.随着Sb掺杂量的增加,Si-QDs的尺寸逐渐增大,薄膜的结晶率X_c有效提高,其PL谱峰随之增强,谱峰的半高峰宽逐渐变窄;由于Si-QDs尺寸的增加还导致PL发光谱峰位产生红移.

The thin films of Sb-doped Silicon Quantum Dots （Si-QDs） embedded in SiaN4 matrix were prepared by using muti-target radio frequency magnetron sputtering deposition technique combined with a rapid thermal process. The microstructure and luminescence properties of the films were studied by transmission electron microscopy, grazing incidence X-ray diffraction, Raman spectroscopy and photoluminescence spectroscopy. The effect of Sb doping on the microstructure and luminescent properties of Si-QDs films was discussed. The results show that the Sb-doping films exhibit obvious Sb- induced crystallization effect in annealing process. The doping of Sb contributes to the diffusion of Si atoms in the Si3 N4 matrix and formation of Si-QDs. With the rise of Sb doping amount, the size of Si-QDs gradually is enlarged, and the crystallinity X c of the films increases effectively. As Sb doping amount rises, the intensity of the PL peaks of the Si-QDs films enhances, and the full width at half maximum of the peaks becomes narrower. Meanwhile, due to the rise of the Si-QDs size, a red-shift is observed in the films with higher Sb doping density.