摘要
为研究空间用四结太阳电池中InGaAsP/InGaAs子电池在电子辐照条件下的性能衰退情况,对InGaAsP/InGaAs双结电池开展了1 MeV电子辐照试验,测试了辐照前后的电学参数和量子效率,分析讨论了参数退化情况。结果表明:随着电子注量和位移损伤剂量的增加,电池性能参数退化程度逐渐加大;由位移损伤缺陷导致的载流子寿命减小,是导致电池短路电流和开路电压下降的主要原因;InGaAsP/InGaAs双结电池基区损伤比发射区损伤更加严重,因此,提高其抗辐射能力的关键在于优化基区结构。
To study the performance degradation of InGaAsP/InGaAs sub-cells in the 4-junction solar cells under electron irradiation,irradiation experiments are carried out with electron of 1 MeV energy.The electrical parameters and quantum efficiency have been tested before and after irradiation.The results show that the degeneration degree of solar-cells performance increases with the increase of electron fluence and displacement damage dose,and the decrease of carrier lifetime caused by defects from displacement damage is the main reason for the degradation of solar-cell short-circuit current and open circuit voltage.InGaAsP/InGaAsdouble junction cell degrades more serious in base area than in the emissive area,which indicates that optimization in the base area is the key approach to improve the property of solar-cell radiation-hardness.
出处
《现代应用物理》
2017年第4期32-36,共5页
Modern Applied Physics
