3 MeV质子辐照条件下DC/DC位移损伤机理研究

Displacement Damage Mechanism of DC/DC Originated From 3 MeV Protons

针对DC/DC的质子位移效应,选取具有抗TID能力的DC/DC器件作为试验样品,在3 MeV质子辐照条件下获取了器件的失效位移损伤剂量。结果表明,DC/DC功能失效是PWM控制器输出异常导致的。通过等效^(60)Coγ辐照及退火试验,排除了TID效应的影响,确定器件功能失效是由位移损伤引起的。高温退火后器件功能恢复,并立即对该器件进行了测试。结果表明,输出电压、电压调整度、负载调整度、交叉调整度、纹波及负载跃变时的输出电压均大幅衰退。利用这些敏感参数,获取了位移损伤导致的电源性能衰退模式。根据位移损伤缺陷类型及退火温度,分析了DC/DC的退火规律,可为DC/DC质子辐射损伤模拟试验方法的建立及其空间应用提供依据。

Displacement damage effect of analog circuit in DC/DC is one of the threatens that make power system function fail during long service life of spacecraft.An anti-TID DC/DC is chosen to study the displacement damage effect in 3 MeV proton.The displacement damage dose threshold response to function fail is found.PWM output error is the reason that makes this fail.By removing the influence of total ionizing dose effect through equivalent ^(60)Coγ radiation and anneal,it is certain that the function fail of DC/DC is caused by displacement damage.When the function recovers after long time high temperature anneal,the DC/DC is tested immediately.Output voltage,voltage regulation,load regulation,cross regulation,ripple,and transient response of the load are found significantly degraded when the function of DC/DC is recovered.And the degradation model of power system in spacecraft can be deduced by these sensitive parameters.The annealing of DC/DC is also discussed according to the displacement defect type and anneal temperature.All the results are useful for radiation hardness assurances of DC/DC to proton.