质子辐照对130nm部分耗尽SOI MOS器件栅氧经时击穿可靠性的影响

Effects of Time-Dependent Dielectric Breakdown of 130nm PD-SOI MOS Device Irradiated by Proton

利用10 MeV质子对130nm部分耗尽SOI MOS器件进行辐照,测试了在不同辐照吸收剂量下,器件的辐射诱导泄漏电流和栅氧经时击穿寿命等参数,分析了质子辐照对器件TDDB可靠性的影响。结果表明:质子辐照器件时,在Si-SiO_2界面产生的界面陷阱电荷,增加了电子跃迁的势垒高度,减少了电荷向栅极的注入,减小了器件的RILC,增加了器件的TDDB寿命。

In this paper,the 130 nm partially depleted sillicon on insulator(PD-SOI)metal oxide semiconductor(MOS)is irradiated by proton with energy of 10 MeV,and the subsequent time-dependent dielectric breakdown(TDDB)and the radiation-induced leakage current(RILC)of the PD-SOI MOS are obtained.The results show that when the proton irradiated the device,the radiation-induced trap charge generated at the interface between Si and SiO_2 increases the barrier height of the electron transition,reduces the injection of charge into the gate,and thus reducing the RILC of the device,and increasing the life of TDDB.