1 MeV电子辐照对HgCdTe材料红外透射光谱的影响

Effects on Infrared Transmission Spectrum of HgCdTe Material Irradiated by 1 MeV Electrons

针对红外探测器在空间应用中受高能粒子辐照后性能衰退的问题,利用电子束辐照实验,开展了位移损伤对HgCdTe材料红外透射光谱影响的研究。通过对比辐照前后材料的性能变化,结合光在材料中的传播过程及半导体辐射效应理论,分析了位移损伤对HgCdTe材料红外透射光谱的影响机制。结果表明:HgCdTe材料经电子辐照后,红外透射光谱发生衰退,衰退的幅度随辐照注量的增大而增大,且短波方向上的衰退幅度大于长波方向上的衰退幅度。该工作可为深入开展HgCdTe红外探测器辐射损伤效应及损伤机理的研究提供参考。

To study the effects of displacement damage to the infrared transmission spectrum of HgCdTe material under the irradiation of electrons,irradiation experiments are carried out with electrons of 1 MeV energy.The mechanism of infrared transmission spectrum degradation caused by displacement damage is studied by analyzing the transport process of infrared light in HgCdTe material.It is observed that the magnitude of degradation is in proportion to the electron fluence after irradiation,and the magnitude of the degradation in the shortwave direction is greater than that in the longwave direction.This research work provides a helpful reference to study the irradiation effects on HgCdTe infrared detectors.