基于共享Buffer的LIGBT和PLDMOS器件研究

The LIGBT and PLDMOS with Shared Buffer

介绍了基于共享Buffer技术的SOI(绝缘体上硅)LIGBT和PLDMOS,相对于传统工艺可以节约2层光刻板和2步工艺流程。主要通过研究在器件漏区的缓冲层特性,对器件特性影响明显。通过实验和仿真结果对比,共享Buffer技术的器件通过工艺和版图优化后能达到原有器件的表现性能。

The SOI （Silicon-On-Insulator） LIGBT （lateral insulated gate bipolar transistor） and PLDMOS （lateral double-diffused MOS）, which based the shared masks, are presented in this paper. The proposed process using Shared-Buffer design during the fabrication, which reduces 2 mask layers and 2 steps compared to the conventional process. The properties of the buffer region surrounding the drain terminal of devices affect the device performance significantly. Experimental and numerical simulation results that device with Shared-Buffer can achieves equivalent performance as original design through process and layout optimization.