TEOS的应用对接触电阻的稳定性问题研究

Study on the Stability of Contact Resistance in TEOS Application

为了解决因TEOS的应用导致接触电阻稳定性变差的问题,对接触电阻的测试数据及曲线进行分析,初步确定调查研究方向,然后分别对接触孔内生成物、接触孔内氧化层以及接触孔的金属覆盖性进行相关验证与分析,最后找到问题的根源所在,同时针对产生问题的原因采取一系列有效的工艺改善。改善措施实施后,进行仿真加工测试,数据经确认正常。此类产品随后在生产线上逐步上量加工,经检验,其接触电阻的数据均在规范值内且非常稳定。此问题的研究解决对提高采用发射区注入工艺的双极型集成电路产品的加工稳定性及产品良率具有非常重要的现实意义。

In order to solve the problem of poor stability of contact resistance caused by TEOS appli-cation, the test data and curves of contact resistance were analyzed to preliminarily determine the re-search direction, then, the substance in contact holes, oxide layer in contact holes and metal coverage ofcontact holes were verified and analyzed respectively, so that the root cause of the problem was found,and at the same time, a series of effective process improvement was adopted to address the cause of theproblem. After the improvement measures are implemented, the simulation processing test is carried out,and the data is confirmed to be normal. This kind of product is then gradually mass-produced on the pro-duction line, after inspection, the contact resistance data are within the specification value and very sta-ble. The study and solution of this problem is of great practical significance to improve the processingstability and product yield of bipolar IC products using emitter implantation process.