Co离子注入ITO薄膜的磁性研究

The Magnetism Study of Cobalt Ions Implanted ITO Thin Film

ITO薄膜是一类被广泛应用的透明导电氧化物薄膜材料,对其进行磁性离子掺杂,使其具有室温铁磁性而用于自旋电子学器件,具有重要的意义。以ITO薄膜为基体,用MEVVA源注入磁性Co离子,经快速热退火处理后,研究Co离子注入前后薄膜样品的磁性质。经GAXRD和XPS分析,没有发现Co纳米团簇及其氧化物等第二相生成。未注入Co离子的ITO薄膜具有室温铁磁性,其磁性起源于薄膜中少量的VO,Co离子注入后,薄膜样品的饱和磁化强度明显增强,一方面是由于Co-O-Co铁磁耦合对的生成,另一方面是磁性Co离子注入后,促进了样品中磁极化子间的交换相互作用。

Tin doped indium oxide （ ITO）is one of the most widely utilized transparent conductingoxides （ TCOs） . It′s of great scientific significance to prepare ITO thin film with room temperatureferromagnetism by magnetic ion doping. It is important for ITO in applications of spintronics devices.In this paper, Co doped ITO films are prepared by Co ions implantation with Metal Vapor VacuumArc （MEVVA）source. Then the samples are annealed by rapid thermal annealing in O2 . No Coclusters and other impurity phases are observed by glancing angle Xray diffraction （ GAXRD）andXray photoelectron spectroscopy （ XPS）measurements. The ferromagnetism in origin ITO film maybe ascribed to oxygen vacancy （ VO） . After Co implantation, the strength of room temperature ferromagnetism （ RTFM）enhances due to the increase of CoOCo ferromagnetic coupling pairs. The doping of magnetic Co ions also promotes the exchange interaction between the magnetic polarons.