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氮化镓GaN在射频RF功率放大器的应用

Application of Gallium Nitride GaN in RF Power Amplifier
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摘要 对于提供最佳功率、效率和带宽的权衡促进了各种不同的研发技巧和半导体技术。每一种不同拓扑和技术都有可能在半导体市场占据一席之地,这是因为它们每一个都有优势,这也是它们能够在当前生存的原因所在。这里关注几个值得信赖的结果,展现这些当前技术在实现高功率、效率和带宽时的可能性。 The trade-off between the best power, efficiency, and bandwidth promotes a variety of research and development techniques and semiconductor technologies. Every topology and technology may occupy a place in the semiconductor market, because each of them has an advantage, which is the reason why they can survive at present. Here are a few trustworthy results, showing the possibilities of the current technology in achieving high power, efficiency, and bandwidth.
作者 刘晓文
出处 《集成电路应用》 2018年第2期67-70,共4页 Application of IC
基金 贵州省科技型中小企业技术创新资金(13C26215205221)
关键词 功率放大器 射频 氮化镓 兰格耦合器 power amplifier, RF, gallium nitride, Langer coupler
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