摘要
采用原子层沉积技术及退火处理工艺制备高阻氧化锌铝（AZO）纳米叠层薄膜。通过原子力显微镜、X射线衍射仪、高阻测试仪对不同退火工艺处理后的AZO纳米叠层薄膜进行表征和分析,并研究了退火温度、退火时间对薄膜形貌、结构及电学稳定性的影响。研究结果表明,经退火处理后的AZO纳米叠层薄膜电阻率明显增大,且适当的时间退火处理有助于薄膜结构的优化。经400℃,6 h退火处理后的AZO纳米叠层薄膜,表面平整连续,粗糙度仅有0.185 nm,且电学稳定性最好。在测试电压为25~1 000 V时,测得薄膜的方块电阻最大值为5.76×10^（12）Ω/,最小值为5.55×10^（12）Ω/,其方块电阻基本稳定。该工艺制备的AZO纳米叠层薄膜在微通道板电子倍增器中具有一定的应用价值。
The high-resistance aluminium zinc oxide （AZO） nanolaminate films were prepared by atomic layer deposition and annealing process. The AZO nanolaminate films after different annealing processes were characterized and analyzed by using atomic force microscope, X-ray diffractometer and high resistance tester. The effects of the annealing temperature and annealing time on the surface mor- phologies, structures and the electrical stabilities of the films were investigated. The research results show that the resistivity of AZO nanolaminate films is obviously increased after being annealed, and ap- propriate annealing time treatment is helpful to optimize the structure of the film. The surface of the AZO nanolaminate films annealed at 400℃ for 6 h is the most smooth and continuous, as well as the best electrical stability, and the roughness is only 0. 185 nm. When the test voltage is from 25 V to 1 000 V, the maximum value and the minimum value of the block resistance are 5.76×10^12Ω/D and 5.55×10^2Ω/ , respectively. The measured block resistance is basically stable. The AZO nanolaminate films prepared by the process have application value in the microchannel plate electron multiplier.
出处
《半导体技术》
CAS
CSCD
北大核心
2018年第2期136-141,共6页
Semiconductor Technology
基金
国家自然科学基金资助项目(61107027)
