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基于应变调制型磁性隧道结的自动置位逻辑门电路 被引量:2

An Automatic Reset Logic Gate Circuit Based on the Strain-Mediated Magnetic Tunneling Junction
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摘要 建立了应变调制型磁性隧道结(MTJ)器件的HSpice电路仿真模型,分析了该器件的转换特性。基于所建立的模型并结合BSIM4 90 nm CMOS模型,设计了一种非易失性自动置位逻辑门电路。分析了4种组合输入电压作用下电路中MTJ磁阻的转变特性。对所设计电路的逻辑功能进行仿真分析,通过改变MTJ尺寸参数,得到了所设计电路两种规格下的输入和输出特性。仿真结果表明,该电路成功实现了或非(NOR)和与非(NAND)逻辑,验证了所设计电路功能的正确性。研究结果对今后基于应变调制型MTJ器件设计低功耗和非易失性集成电路具有重要意义。 A HSpice circuit simulation model of a strain-mediated magnetic tunneling junction(MTJ)device was established,and the transfer characteristics of the device were analyzed.A non-volatile and automatic reset logic gate circuit was designed by using the established model combined with the BSIM4 90 nm CMOS model.The variation characteristics of the MTJ magnetoresistance in the circuit were analyzed under four combined input voltages.The logic function of the designed circuit was simulated and analyzed,and the input and output characteristics of the designed circuit with two sizes were obtained by changing the MTJ size parameters.The simulation results show that the circuit succeeds in the implementation of the NOR logic and NAND logic,and the validity of the designed circuit function is verified.The research result has a great significance in the design of the low-power dissipation and non-volatile integrated circuit based on the strain-mediated MTJ device.
出处 《微纳电子技术》 北大核心 2018年第2期84-90,共7页 Micronanoelectronic Technology
基金 国家自然科学基金资助项目(61302022,61401498)
关键词 应变调制型磁性隧道结(MTJ) 电路模型 或非(NOR)逻辑 与非(NAND)逻辑 CMOS strain-mediated magnetic tunneling junction (MTJ) circuit model NOR logic NAND logic CMOS
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