沉积在Si衬底上Co2MnSi薄膜的结构和磁性能分析

The microstructure and magnetic characterization of Co_2MnSi thin films deposited on Si substrate

将不同厚度的Co_2Mn Si(CMS)薄膜沉积在Si衬底上,并在不同的退火温度下退火,以探究其微观结构以及磁性能的变化规律.保持CMS薄膜退火温度为600℃,随着薄膜厚度增加至100 nm,由于B2结构取向增大,其Ms随之相应增大到923 emu/cc;保持CMS薄膜厚度为50 nm,随着退火温度升高到700℃,可以观察到B2结构取向减小,而且Hc值异常增加到134 Oe,这可能是由于CMS层与Ta层存在相互扩散的现象所导致.

Co2MnSi（ CMS） thin films with different thickness were deposited on Si substrate and annealed at different temperatures to investigate the evolution of microstructure and magnetic properties. When Ta was fixed at 600 ℃,due to the enhancement of B2-ordering,the increasing of CMS thickness to 100 nm will induce the increasing of Msto 923 emu/cc. When CMS film thickness was fixed at 50 nm,the deterioration of B2-ordering and the abnormal increase of Hcvalue to 134 Oe were observed with increasing Ta to 700 ℃ which may be attributed to the intermixing between CMS layer and Ta layer.