匀胶托盘几何参数对硅片形变的影响研究

Silicon Wafer Deformation Study on Influence of the Geometric Parameters of Spin Coating Pallet

基于FLUENT进行了数值模拟试验,探讨了匀胶托盘几何参数对硅片形变的影响。研究结果表明:在相同真空负压作用下,当承片台直径D小于30mm时,硅片的形变主要为翘曲变形;当承片台直径D大于45mm时,硅片的形变受旋涂匀胶托盘形变的影响增大,在硅片边缘处发生下翘形变。在相同出口速度下,硅片中心周围处的形变和真空度均随着真空吸片口直径d的增大而增大。当承片台面积为其所吸附硅片面积的(1/2~3/5)附近且真空吸片口直径为3mm左右时,旋涂硅片的形变量最小。

The numerical simulation experiments were carried out based on FLUENT,including discussing the effect of the geometric parameters of spin coating pallet on silicon wafer deformation. The numerical results indicated that under the same vacuum negative pressure effect,when the wafer supporting stage diameter was smaller than 30 mm,silicon wafer deformation was mainly warpage deformation;the effect of spin coating pallet deformation on silicon wafer deformation was increased and downwarping deformation was occured at the edge of the silicon wafer,when the wafer supporting stage diameter was greater than 45 mm. At the same exit velocity,the deformation around center of silicon wafer and the vacuum degree were increased with the increase of the diameter of the vacuum suction. When the area of wafer supporting stage was(1/2~3/5)of the silicon wafer and the diameter of the vacuum suction was about 3 mm,the silicon wafer deformation was the smallest.