摘要
为了改善使用CIGS四元靶所制备的预制膜在退火中结晶性能较差的情况，采用相对较高的退火温度对CIGS四元预制膜进行退火处理，温度的提高有利于改善CIGS吸收层的结晶性能从而得到较好的太阳电池。同时研究高温退火时的硫化处理，在硫化处理下，电池的开路电压可以得到很好的提升，获得转换效率高于19％的电池。
In order to improve the crystallization property of CIGS absorber layer sputtered from a single quaternary CIGS target in the annealing process, the effect of temperature in the process was researched. The crystallization property of CIGS absorber layer was improved with higher treatment temperature, and the solar cell with better properties could be produced. The effect of sulfuration in the annealing process was also studied, the Voc of the CIGS solar cell could be increased by the sulfuration treatment and CIGS solar cell with conversion efficiency higher than 19% was obtained.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2018年第2期567-571,共5页
Acta Energiae Solaris Sinica
