摘要
Topological nodal-line semimetal is a new emerging material, which is viewed as a three-dimensional （3D） analog of graphene with the conduction and valence bands crossing at Dirac nodes, resulting in a range of exotic transport properties. Herein, we report on the direct quantum transport evidence of the 3D topological nodal-line semimetal phase of ZrSiS with angular-dependent magnetoresistance （MR） and the combined de Hass-van Alphen （dHvA） and Shubnikov-de Hass （SdH） oscillations. Through fitting by a two-band model, the MR results demonstrate high topological nodal-line fermion densities of approximately 6 × 10^21 cm^-3 and a perfect electron/hole compensation ratio of 0.94, which is consis- tent with the semi-classical expression fitting of Hall conductance Gxy and the theoretical calculation. Both the SdH and dHvA oscillations provide clear evidence of 3D topological nodal-line semimetal characteristic.
Topological nodal-line semimetal is a new emerging material, which is viewed as a three-dimensional （3D） analog of graphene with the conduction and valence bands crossing at Dirac nodes, resulting in a range of exotic transport properties. Herein, we report on the direct quantum transport evidence of the 3D topological nodal-line semimetal phase of ZrSiS with angular-dependent magnetoresistance （MR） and the combined de Hass-van Alphen （dHvA） and Shubnikov-de Hass （SdH） oscillations. Through fitting by a two-band model, the MR results demonstrate high topological nodal-line fermion densities of approximately 6 × 10^21 cm^-3 and a perfect electron/hole compensation ratio of 0.94, which is consis- tent with the semi-classical expression fitting of Hall conductance Gxy and the theoretical calculation. Both the SdH and dHvA oscillations provide clear evidence of 3D topological nodal-line semimetal characteristic.
