摘要
The super junction（SJ） has been recognized as the ＂milestone＂ of the power MOSFET, which is the most important innovation concept of the voltage-sustaining layer（VSL）. The basic structure of the SJ is a typical junction-type VSL（J-VSL） with the periodic N and P regions. However, the conventional VSL is a typical resistance-type VSL（R-VSL） with only an N or P region. It is a qualitative change of the VSL from the R-VSL to the JVSL, introducing the bulk depletion to increase the doping concentration and optimize the bulk electric field of the SJ. This paper firstly summarizes the development of the SJ, and then the optimization theory of the SJ is discussed for both the vertical and the lateral devices, including the non-full depletion mode, the minimum specific on-resistance optimization method and the equivalent substrate model. The SJ concept breaks the conventional＂silicon limit＂ relationship of R_（on）∝V_B^（2.5）, showing a quasi-linear relationship of R_（on）∝V_B^（1.03）.
The super junction（SJ） has been recognized as the ＂milestone＂ of the power MOSFET, which is the most important innovation concept of the voltage-sustaining layer（VSL）. The basic structure of the SJ is a typical junction-type VSL（J-VSL） with the periodic N and P regions. However, the conventional VSL is a typical resistance-type VSL（R-VSL） with only an N or P region. It is a qualitative change of the VSL from the R-VSL to the JVSL, introducing the bulk depletion to increase the doping concentration and optimize the bulk electric field of the SJ. This paper firstly summarizes the development of the SJ, and then the optimization theory of the SJ is discussed for both the vertical and the lateral devices, including the non-full depletion mode, the minimum specific on-resistance optimization method and the equivalent substrate model. The SJ concept breaks the conventional＂silicon limit＂ relationship of R_（on）∝V_B^（2.5）, showing a quasi-linear relationship of R_（on）∝V_B^（1.03）.
