SiGe HBT单粒子瞬态TCAD仿真研究

Research on the Single Event Transient in the SiGe HBT Based on TCAD Simulation

借助于TACD数值仿真,对具有交叉指状结构的锗硅异质结双极型晶体管（SiGe HBT）中由重离子辐射诱导的单粒子瞬态（SET）效应展开了详细的研究。首先分析了重离子辐射诱导的电势和场强的变化,阐明了SiGe HBT中单粒子瞬态机制。然后,通过对比重离子入射至器件不同位置时各电极的瞬态电流和感生电荷的收集情况,确定了集电极/衬底（CS）结及附近区域为SiGe HBT单粒子瞬态的敏感区域。结果表明相对于集电极和衬底的电荷收集,基极和发射极收集的电荷可忽略不计。此外,各电极的瞬态电流和电荷收集还具有明显的位置依赖性。上述结果可为SiGe HBT单粒子效应的抗辐射加固提供有力的指导依据。

Based on TACD numerical simulation,the single event transient （SET） in SiGe heterojunction bipolar transistor （HBT） with an interdigital layout induced by heavy ion radiation was detailedly studied. The variations of the electric potential and electric field induced by heavy ion radiation were analyzed,and the mechanism of the single event transient in SiGe HBT was clarified. By compared the transient current and induced charge of each terminal for different incident positions,the collector-substrate （CS） junction and adjacent areas were identified as the sensitive areas for the SET in SiGe HBT. The results show that the collected charge at the base and emitter terminal is negligible compared to that at the collector terminal and substrate. Furthermore,a significant position dependence is found for the transient current and collected charge at each terminal. The above results can provide a strong guidance for the radiation hardening of the single event effect in SiGe HBT.