摘要
简介了一种新型绝缘体上硅(SOI)高声压噪声传感器。主要对提升噪声传感器关键指标的感声膜结构的设计过程进行了仿真和计算,利用ANSYS软件对设计尺寸进行了模拟仿真。对设计的噪声传感器进行了频响以及线性度测试:在高声压级135~200 d B动态范围内的线性度小于1%,频率响应为20~100 000 Hz;工作温度范围在-40~260℃,传感器的输出为标准电压信号,可组成被动式声测量阵列,用于测量高声压级的噪声信号。
A new type of silicon on insulator（ SOI） high sound pressure noise sensor is introduced. Design process of sound sensitive membrane structure which improves key indicators of noise sensor is mainly simulated and calculated. The designed size is simulated with ANSYS software. Frequency response test and linearity test of the designed noise sensor is carried out. Linearity of high sound pressure level at range of 135 ~ 200 d B dynamic scope is less than 1 %,frequency response at range of 20 ~ 100 000 Hz,working temperature range of-40 ~260 ℃,output of the sensor is standard voltage signal,which can be composed of passive acoustic measurement array,and used to measure high sound pressure level of noise signal.
出处
《传感器与微系统》
CSCD
2018年第2期109-111,共3页
Transducer and Microsystem Technologies
关键词
高声压
压阻式
噪声传感器
high sound pressure
piezoresistive type
noise sensor
