不同腔体中金刚石大单晶的高温高压合成

Synthesis of Diamond Single Crystal in Different Cavity under High Pressure and High Temperature

在压力6.5 GPa、温度1295℃的合成条件下,研究了10 mm与15 mm两种合成腔体中金刚石大单晶的合成。对两种合成腔体中晶体的生长速率进行了考察,借助有限元模拟计算分析了合成腔体中碳素对流场对金刚石晶体生长速率的影响。利用傅里叶红外光谱对15 mm合成腔体中所制备的金刚石大单晶进行了测试,并对该晶体内部的氮缺陷浓度进行了计算。此外,通过Raman光谱测试对所合成的金刚石质量进行了表征。

The synthesis of diamond single crystal was investigated in 10 mm and 15 mm cavities at pressure of 6.5 GPa and temperature of 1295 ℃ by temperature gradient growth. The growth rates of the synthesized diamond in different cavity were noticed, which was discussed by the carbon flow fields in different cavity. The diamond obtained in 15 mm cavity was characterized by FTIR. According to the FTIR spectrum, the nitrogen impurity concentration of the diamond was calculated. Furthermore, the quality of the diamond was evaluated by Raman measurement.