150 keV电子辐照下直拉硅的缺陷演化及其电学性能

The Properties and Evolutionary Law of Defects of Czochralski Silicon under 150 keV Electrons Irradiation

研究150 keV电子辐照下直拉硅中的缺陷演化规律,探讨辐照缺陷对直拉硅电学性能的影响.结果表明,150 keV电子辐照在直拉硅中引入VnOm复合体,且随辐照注量的增大缺陷浓度升高.对于不同导电类型的直拉硅,P型硅的薄膜方块电阻和薄膜电阻率随电子辐照注量的增大而增大并趋于饱和,而N型硅的薄膜方块电阻和薄膜电阻率随电子辐照注量的增大而减小并趋于饱和.

In this paper,the evolution law of defects was studied under 150 keV electrons irradiation in Czochralski silicon. The effects of irradiation defects on the electrical properties of Czochralski silicon were investigated. The results show that the VnOmcomplex was produced under 150 keV electrons irradiation in Czochralski silicon and its defects concentration became higher with the increasing of irradiation fluences.For different conductivity types of Czochralski silicon,the sheet resistance and film resistivity of P-type silicon increases with the increasing of electron irradiation fluence and tend to be saturated. But those propertise of N-type silicon decreases with the increasing of electron irradiation fluence and tends to be saturated.