摘要
One-dimensional hollow nanostructures have potential applications in many fields and can be fabricated using various methods. Herein, a selective-oxidation route for the synthesis of unique SexTey nanotubes （STNTs） with a controlled morphology using TexSey@Se core-shell nanowires （TSSNWs） as a template is reported. Because of the lower redox potential of TeO2/Te compared to that of H2SeO3/Se, the Te in TSSNWs can be preferentially oxidized by an appropriate oxidant of HNO2 to form STNTs. The inner diameters and wall thicknesses of the STNTs can be tuned by modulating the core diameters and shell thicknesses of the TSSNWs, respectively. The STNTs can be assembled into a monolayer composed of well-arranged nanotubes using the Langmuir-Blodgett technique. A device based on films stacked with 10 STNT monolayers was fabricated to investigate the photocoductivity of the STNTs. The STNTs exhibited a good photoresponse over the whole ultraviolet-visible spectrum, revealing their votential for application in ovtoelectronic devices.
One-dimensional hollow nanostructures have potential applications in many fields and can be fabricated using various methods. Herein, a selective-oxidation route for the synthesis of unique SexTey nanotubes （STNTs） with a controlled morphology using TexSey@Se core-shell nanowires （TSSNWs） as a template is reported. Because of the lower redox potential of TeO2/Te compared to that of H2SeO3/Se, the Te in TSSNWs can be preferentially oxidized by an appropriate oxidant of HNO2 to form STNTs. The inner diameters and wall thicknesses of the STNTs can be tuned by modulating the core diameters and shell thicknesses of the TSSNWs, respectively. The STNTs can be assembled into a monolayer composed of well-arranged nanotubes using the Langmuir-Blodgett technique. A device based on films stacked with 10 STNT monolayers was fabricated to investigate the photocoductivity of the STNTs. The STNTs exhibited a good photoresponse over the whole ultraviolet-visible spectrum, revealing their votential for application in ovtoelectronic devices.
