摘要
采用１ＭｅＶ高能电子，选择７种辐照剂量：１０￣（１３）、３×１０￣（１３）、１０￣（１４）、３×１０￣（１４）、１０￣（１５）、３×１０￣（１５）、１０￣（１６）ｃｍ￣（－２），对两种不同电阻率的Ｎ型单品硅进行电子辐照。采用光伏方法测量辐照前后单晶硅少子寿命的变化，并计算了电子辐照所引入的缺陷浓度。研究高能电子辐照对半导体器件性能的影响及其在电子开关器件制造工艺中的应用。
Two kinds of N-type single crystal Si with different resistivity have beenirradiated by 1 MeV high-energy electron at seven different flux, 10￣(13),3 × 10￣(13), 10￣(14),3× 10￣(14), 10￣(15),3× 10￣(15),10￣(16)cm￣(-2).The changes of minority-carrier lifetime of the Si beforeand after irradiation have been measured by photovoltage method and the defect concen-trations induced by irradition have been calculated.The effects of high-energy electronirradiation on properties of semiconductor devices and its application to manufacturetechnology of electronic switch devices are investigated.
关键词
电子辐照
少子寿命
光伏方法
晶格缺陷
electron irradiation
minority-carrier lifetime
photovoltage method
latticedefect
