摘要
Highly oriented（00l）（La_（0.26）Bi_（0.74））_2Ti_4O_（11 ）thin films are deposited on（100） SrTiO_（3 ）substrates using the pulsed laser deposition technique.The grains form a texture of bar-like arrays along Sr Ti O_3110directions for the film thickness above 350 nm,in contrast to spherical grains for the reduced film thickness below 220 nm.X-ray diffraction patterns show that the highly ordered bar-like grains are the ensemble of two lattice-matched monoclinic（La,Bi）_4Ti_3O_（12 ）and TiO_（2 ）components above a critical film thickness.Otherwise,the phase decomposes into the random mixture of Bi_2Ti_2O_（7 ）and Bi_4Ti_3O_（4 ）spherical grains in thinner films.The critical thickness can increase up to 440 nm as the films are deposited on LaNiO_3-buffered SrTiO_（3 ）substrates.The electrical measurements show the dielectric enhancement of the multi-components,and comprehensive charge injection into interfacial traps between（La,Bi）_4Ti_3O_（12 ）and TiO_（2 ）components occurs under the application of a threshold voltage for the realization of high-charge storage.
Highly oriented（00l）（La_（0.26）Bi_（0.74））_2Ti_4O_（11 ）thin films are deposited on（100） SrTiO_（3 ）substrates using the pulsed laser deposition technique.The grains form a texture of bar-like arrays along Sr Ti O_3110directions for the film thickness above 350 nm,in contrast to spherical grains for the reduced film thickness below 220 nm.X-ray diffraction patterns show that the highly ordered bar-like grains are the ensemble of two lattice-matched monoclinic（La,Bi）_4Ti_3O_（12 ）and TiO_（2 ）components above a critical film thickness.Otherwise,the phase decomposes into the random mixture of Bi_2Ti_2O_（7 ）and Bi_4Ti_3O_（4 ）spherical grains in thinner films.The critical thickness can increase up to 440 nm as the films are deposited on LaNiO_3-buffered SrTiO_（3 ）substrates.The electrical measurements show the dielectric enhancement of the multi-components,and comprehensive charge injection into interfacial traps between（La,Bi）_4Ti_3O_（12 ）and TiO_（2 ）components occurs under the application of a threshold voltage for the realization of high-charge storage.
作者
郭会珍
江安全
Hui-Zhen Guo, An-Quan Jiang(State Key Laboratory of ASIU ＆ System, School of Microeleetronics, Fudan University, Shanghai 20043)
基金
Supported by the Basic Research Project of Shanghai Science and Technology Innovation Action under Grant No 17JC1400300
the National Key Basic Research Program of China under Grant No 2014CB921004
the National Natural Science Foundation of China under Grant No 61674044
the Program of Shanghai Subject Chief Scientist under Grant No 17XD1400800
