摘要
We demonstrate a high performance GaAs/AlGaAs-based quantum-well photodetector(QWP)device with a peak response frequency of 4.3 THz.The negative differential resistance(NDR)phenomenon is found in the dark currentvoltage(I-V)curve in the current sweeping measurement mode,from which the breakdown voltage is determined.The photocurrent spectra and blackbody current responsivities at different voltages are measured.Based on the experimental data,the peak responsivity of 0.3 A/W(at 0.15 V,8 K)is derived,and the detection sensitivity is higher than 10^(11)Jones,which is in the similar level as that of the commercialized liquid-helium-cooled silicon bolometers.We attribute the high detection performance of the device to the small ohmic contact resistance of-2Ωand the big breakdown bias.
作者
Zhenzhen Zhang
Zhanglong FU
Xuguang Guo
Juncheng Cao
张真真;符张龙;郭旭光;曹俊诚(Key Laboratory of Terahertz Solid-State Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Ministry of Education and Shanghai Key Laboratory of Modern Optical System and Shanghai Terahertz Research Center.University of Shanghai for Science and Technology,Shanghai 200093,China;University of Chinese Academy of Sciences,Beijing 100049,China)
基金
Project supported by the National Key R&D Program of China(Grant No.2017YFF0106302)
the National Basic Research Program of of China(Grant No.2014CB339803)
the National Natural Science Foundation of China(Grant Nos.61404150,61405233,and 61604161)
the Shanghai Municipal Commission of Science and Technology,China(Grant Nos.15JC1403800,17ZR1448300,and 17YF1429900)
