摘要
采用磁控溅射法顺序沉积Cu/Sn/ZnS/Cu/Sn/ZnS/玻璃金属预置层,在530℃经1.5、2.0、3.0 h硫化热处理制备Cu_2ZnSnS_4(CZTS)薄膜,研究硫化时间对CZTS薄膜性能的影响。利用X射线衍射仪(XRD)、拉曼光谱仪(Raman)、扫描电子显微镜(SEM)、紫外-可见分光光度计(UV-VIS)等一系列测试设备对薄膜的结构、组分含量、表面形貌及光学带隙进行表征及计算。研究发现:由于前驱体中Cu_6Sn_5致密层的存在,硫化1.5 h时元素间反应不充分;随着热处理时间的增加,元素间反应更加充分,抑制薄膜中Sn元素的挥发,经2.0、3.0 h硫化热处理后的薄膜为单一CZTS相;同时,随着硫化时间的增加,CZTS薄膜的晶化程度提高,颗粒尺寸和禁带宽度增大。
The stacked metallic precursors with the Cu/Sn/Zn S/Cu/Sn/Zn S/glass were sequentially deposited by magnetron sputtering. The Cu2 Zn Sn S4（CZTS）thin films were prepared when the precursors were annealed in sulfur vapor at 530 ℃ for 1.5,2.0 and 3.0 h. The effect of sulfurization time on the structure and property of Cu2ZnSnS4 thin film was studied. The microstructure,composition,morphology and optical property of the thin films were investigated by X-ray diffraction（XRD）,Raman scattering（Raman）,scanning election microscopy（SEM）and UV-visible spectrophotometer（UV-VIS）. The results show that due to the presence of the Cu6Sn5 compact layer in the precursor,the reaction between the elements is not sufficient when the sulfurization time is 1.5 h. The reaction between elements is more adequate with increasing sulfurization time and the volatilization of Sn element in the film is suppressed. When the precursors are annealed under sulfurization for 2.0 and 3.0 h,only CZTS phase forms. The crystallization degree,the particle size and the band gap of CZTS thin films all increase with increasing sulfurization time.
出处
《兵器材料科学与工程》
CAS
CSCD
北大核心
2017年第6期62-65,共4页
Ordnance Material Science and Engineering
基金
吉林师范大学博士科研启动项目(2015016)
